Raman scattering of light by optical phonons in Si-Ge-Si structures with quantum dots

Abstract

Raman scattering of light by optical phonons in Si-Ge-Si structures with pseudomorphic germanium quantum dots has been investigated. Resonance amplification of the scattering intensity on E 0 (Γ7−Γ8) transitions has been observed. It is shown that as a result of the formation of the layer of germanium quantum dots, the resonance energy is ∼0.3 eV higher than in the two-dimensional case.