Stark effect in semiconductor quantum dots

Abstract

A theory of the Stark effect in semiconductor quantum dots has been developed for the case of dominating polarization interaction of an electron and a hole with the nanocrystal surface. A shift of electron and hole quantum well levels in a nanocrystal in the interband absorption range in a uniform external electric field is determined by the quantum-confinement quadratic Stark effect. An electro-optical method is proposed, making it possible to estimate the characteristic quantum dot radius at which three-dimensional excitons can exist.