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Analysis on the structural, vibrational and defect states of chlorine treated polycrystalline cadmium telluride structures grown by e-beam evaporation
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Citations
37
References
2015
Year
Phonon Emission LinesOptical MaterialsEngineeringE-beam EvaporationCadmium ChlorideChemistryLuminescence PropertySemiconductorsIi-vi SemiconductorChemical EngineeringDefect StatesMaterials EngineeringMaterials SciencePhotoluminescenceCrystalline DefectsNanotechnologyOptoelectronic MaterialsNanocrystalline MaterialTemperature Dependent PhotoluminescenceApplied PhysicsThin FilmsSolar Cell Materials
Temperature dependent photoluminescence (PL) measurements are performed in order to study the defect states in cadmium chloride treated polycrystalline cadmium telluride (CdTe) thin films grown by e-beam evaporation technique. Three luminescence bands are observed including a double peak emission at 1.577 eV and 1.573 eV corresponding to free electron-to- acceptor transition and a donor–acceptor pair (DAP) transition, respectively, along with a broad peak at 1.45 eV. This broad band emission is related to A-center chlorine based complex and also includes longitudinal (LO) phonon emission lines for CdTe spaced by ∼21 meV. Investigation into grain sizes revealed grains of 0.2 μm for as-grown films and ∼2–3 μm for chlorine activated films shown by atomic force microscopy (AFM). Raman analysis indicates that the films have been grown with excess of Te leading to p-type conductivity in the structure, whereas LO phonon mode of polycrystalline CdTe reveals quasi phonon modes nature.
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