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Dielectric Activity and Ferroelectricity in Piezoelectric Semiconductor Li-Doped ZnO
166
Citations
16
References
1996
Year
Materials ScienceElectrical EngineeringDielectric ActivityEngineeringSpecific HeatFerroelectric ApplicationOxide ElectronicsApplied PhysicsFerroelectric MaterialsPiezoelectric MaterialsCusp-like AnomalyNew Dielectric AnomalyPiezoelectricityThin FilmsPiezoelectric MaterialFunctional Materials
Temperature dependences of dielectric constants, specific heat and D – E hysteresis loops of Li-doped zinc oxide ceramics were investigated. A new dielectric anomaly was found at 330 K in Zn 1- x Li x O with x =0.17. A cusp-like anomaly was also found in specific heat. A ferroelectric D – E hysteresis loop was successfully observed for the first time. These observations suggest that replacement of host Zn ions by small Li ions induces a ferroelectric phase in the wurtzite-type ZnO piezoelectric semiconductor. This material is a candidate for ferroelectric thin films in integrated ferroelectric devices.
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