Infrared spectroscopy of interfaces in amorphous hydrogenated silicon/silicon nitride superlattices

Abstract

Infrared and atomic composition measurements of a-Si:H/a-SiNx:H superlattices as a function of repeat distance show ∼1×1015 cm−2 extra hydrogen bonded to Si at the interface formed when a-Si:H is deposited on a-SiNx:H. The H distribution peaks in the first monolayer and decays in the a-Si:H layer over a distance of ∼19 Å. The hydrogen relieves the large lattice mismatch between the two layers and pacifies defects.