Zeeman levels of shallow acceptors in cubic semiconductors

Abstract

A detailed theory for the Zeeman splitting of shallow acceptors in cubic semiconductors is presented, allowing for cubic contributions from the band structure, magnetic field orientations B//(001), (111), (110) and large magnetic fields B. Practically exact solutions are achieved by taking the contributions of higher angular momenta into account. The authors calculate the Zeeman splitting of the ground state and the first excited odd-parity states. By also determining the probability for transitions between these states they succeed in a reasonable interpretation of the experimental results for Ge and GaAs. The authors tabulate g-values for a wide range of Luttinger parameters. A description of the Zeeman splitting in terms of a linear field dependence only proves to be accurate for limited field strengths.