Resistance switching in the metal deficient-type oxides: NiO and CoO

Abstract

The resistance switching properties in Pt∕Ni–O∕Pt and Pt∕Co–O∕Pt synthesized by the magnetron sputtering have been investigated. The oxygen partial pressure during sputtering and the post-thermal process are crucial to forming of the trilayer. By investigating x-ray photoemission spectroscopy spectra, the increase of initial resistance in Ni–O was caused by the variation of the stoichiometry, while that in the Co–O was accompanied by the phase transformation between CoO and Co3O4. The resistance switching in Pt∕Co–O∕Pt and Pt∕Ni–O∕Pt exhibits the analogous electrode area and temperature dependences. As a result of the I-V measurements at the elevated temperature, the assistance of Joule heating in the reset process is implied.