Publication | Closed Access
Self-assembled InGaN quantum dots on GaN emitting at 520nm grown by metalorganic vapor-phase epitaxy
42
Citations
18
References
2007
Year
Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsNanotechnologyApplied PhysicsAluminum Gallium NitrideGan Power DeviceMetalorganic Vapor-phase EpitaxyCategoryiii-v SemiconductorOptoelectronicsCompound SemiconductorSelf-assembled Ingan
| Year | Citations | |
|---|---|---|
Page 1
Page 1