Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs

Abstract

The disappearance of RHEED intensity oscillation by increasing growth temperature in GaAs MBE on a stepped surface has been studied theoretically based on the 2d-nucleation and surface diffusion theories. By comparing the present and the published RHEED results, we get the surface diffusion length (λ s ) and the diffusion coefficient ( D s ) of Ga atoms on the (100) GaAs surface respectively as λ s [cm]=4.0 ×10 -8 exp (0.3/ k T ) and D s [cm 2 /s]=1.6 ×10 -2 exp (-1.1/ k T ).