Japanese Journal of Applied Physics · 1988 · 130 citations · 11 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSurface ScienceDiffusion In SolidsSemiconductor Crystal GrowthSemiconductor PhysicsSemiconductor SurfacesSurface DiffusionSurface PhysicsAtomic DiffusionDiffusion LengthMode TransitionStep-flow GrowthSurface Diffusion CoefficientsSurface Diffusion MechanismsTemperature Dependence Of Surface DiffusionTemperature-dependent Growth
The disappearance of RHEED intensity oscillation by increasing growth temperature in GaAs MBE on a stepped surface has been studied theoretically based on the 2d-nucleation and surface diffusion theories. By comparing the present and the published RHEED results, we get the surface diffusion length (λ s ) and the diffusion coefficient ( D s ) of Ga atoms on the (100) GaAs surface respectively as λ s [cm]=4.0 ×10 -8 exp (0.3/ k T ) and D s [cm 2 /s]=1.6 ×10 -2 exp (-1.1/ k T ).
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