Boron Doping of Graphene for Graphene–Silicon p–n Junction Solar Cells

Abstract

The modulation of the electrical properties of graphene is essential to realize graphene-based electronics. Boron-doped p-type graphene films with band gaps of ∼50 meV are prepared by chemical vapor deposition using ethanol and boron powder as the precursors. Under AM 1.5 illumination, the p–n junction solar cells made from boron-doped graphene films and n-type silicon show 3.4% conversion efficiency after nitric acid treatment.