AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVD

Abstract

We report the room-temperature pulsed operation of AlGaAs/GaAs multi-quantum well (MQW) laser diodes (LD's) fabricated on Si substrates by MOCVD. The lowest threshold current obtained in 7 µm-wide oxide stripe MQW LD's was 170 mA at room temperature (at 293 K). The average threshold current and peak wavelength among the tested 60 chips were 324 mA and 864.3 nm, respectively. The maximum differential quantum efficiency was 14.0%.