Growth of InSb using tris(dimethylamino)antimony and trimethylindium

Abstract

We have grown epitaxial layers of InSb on p−-InSb substrates by metalorganic chemical vapor deposition using tris(dimethylamino)antimony (TDMASb) and trimethylindium (TMIn). Growth temperatures from 285 to 500 °C and pressures from 76 to 660 Torr have been investigated. The V/III ratio was varied from 0.63 to 8.6 using growth rates from 0.06 to 0.67 μm/h. For temperatures ≤425 °C, the growth rate was proportional to the temperature. The growth rate was proportional to the TMIn flow at all temperatures. Temperatures ≳400 °C produced p-type layers while growth temperatures ≤400 °C produce n-type layers. The pyrolysis temperature of TDMASb appears to be lower than that of TMIn.