Publication | Closed Access
<i>Q</i>-switched ruby laser alloying of Ohmic contacts on gallium arsenide epilayers
43
Citations
7
References
1978
Year
EngineeringLaser ApplicationsLaser MaterialLaser AlloyingMolecular Beam EpitaxyCompound SemiconductorMaterials ScienceMaterials EngineeringElectrical EngineeringPhysicsConventional AlloyingLaser Processing TechnologyLaser-assisted DepositionOhmic ContactsMicroelectronicsAdvanced Laser ProcessingGallium Arsenide EpilayersApplied PhysicsOptoelectronics
Ohmic contacts of AuGe have been produced on GaAs epilayers by laser alloying. The contacts possess morphological and electrical properties which are superior to those formed by conventional alloying.
| Year | Citations | |
|---|---|---|
Page 1
Page 1