Piezoelectric scattering in quantised surface layers in semiconductors

Abstract

A theory of electron mobility for a two-dimensional electron gas scattered by piezoelectric phonons is developed. The mobility values are then computed for different compound semiconductors at different lattice temperatures. It is found that piezoelectric-scattering-limited mobilities in GaAs, InSb and InAs are smaller than acoustic-phonon-scattering-limited mobility while in strong piezoelectric materials like CdS and ZnO, piezoelectric scattering is more dominant.