Dislocation Structure and Macroscopic Characteristics of Plastic Deformation at Creep of Silicon Crystals

Abstract

Abstract It has been proved that the creep curve of silicon crystals under uniaxial compression at 2 to 15 kp/mm 2 and 900 to 1300 °C consists of five characteristic portions, each of them exhibiting a typical dislocation structure. The stationary stage is characterized by misoriented subgrains. The stationary creep rate at stresses up to 10 kp/mm 2 is governed by the kinetic equation and controlled by barriers associated with dislocations in the subboundaries.