Effects of Niobium Doping on the Microstructure and Electrical Properties of 0.36BiScO ₃ –0.64PbTiO ₃ Ceramics

Abstract

Recently, a new family of piezoelectric perovskite materials based on the solid solution (1− x )BiScO 3 – x PbTiO 3 was developed. This system was found to have a Curie temperature higher than 450°C and excellent piezoelectric properties near the MPB composition. Niobium, as a donor dopant in the piezoelectric system Pb(Zr,Ti)O 3 and other lead‐based perovskite materials, has commonly been used to increase the electrical resistivity, dielectric, and piezoelectric properties. In the current work, the effect of niobium substitution in the BS–PT system has been reported. The results of niobium additions in the BS–PT system showed no large enhancement of the piezoelectric properties. Niobium doping also led to lower Curie temperatures and higher dielectric loss. Further grain size effects in niobium‐doped BS–PT compositions provided experimental evidence of significant extrinsic contributions to the piezoelectric properties in this system.