Uncooled InSb/In1−<i>x</i>Al<i>x</i>Sb mid-infrared emitter

Abstract

Using heterostructures of InSb/In1−xAlxSb, grown by molecular beam epitaxy, diodes have been fabricated which emit at room temperature with a peak wavelength in the range 5.5–5.8 μm and an internal efficiency of 0.2%.