Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection

Abstract

A silicon nanowire field-effect transistor (SiNW FET) with local side-gates and Pd surface decoration is demonstrated for hydrogen (H2) detection. The SiNW FETs are fabricated by top-down method and functionalized with palladium nanoparticles (PdNPs) through electron beam evaporation for H2 detection. The drain current of the PdNP-decorated device reversibly responds to H2 at different concentrations. The local side-gates allow individual addressing of each sensor and enhance the sensitivity by adjusting the working region to the subthreshold regime. A control experiment using a non-functionalized device verifies that the hydrogen-sensitivity is originated from the PdNPs functionalized on the SiNW surface.