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Electron scattering mechanisms in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type indium selenide
143
Citations
24
References
1984
Year
Categoryquantum ElectronicsEngineeringNuclear PhysicsElectron DiffractionElectron PhysicMagnetismMath XmlnsElectron SpectroscopyQuantum MaterialsHomopolar Optical-phonon ScatteringMaterials SciencePhysicsOptical PhononAtomic PhysicsSemiconductor MaterialMagnetoresistance CoefficientsQuantum MagnetismSpintronicsNatural SciencesApplied PhysicsCondensed Matter PhysicsPhonon
Electron scattering mechanisms in $n$-type indium selenide are investigated by means of the temperature dependence (4-500 K) of Hall mobility and the magnetic field dependence of Hall and magnetoresistance coefficients. The Schmid model for homopolar optical-phonon scattering can explain the temperature dependence of electron mobility above 40 K. The electron-phonon coupling constant is determined, ${g}^{2}=0.054$. The optical phonon involved in the process is identified as the ${A}_{1}^{\ensuremath{'}}$ phonon with energy 14.3 meV. The magnetic field dependence of Hall and magnetoresistance coefficients is discussed in terms of the Jones-Zener expansion.
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