Chemical Vapor Deposition of Transparent, Electrically Conductive Tin Oxide Films Formed from Dibutyl Tin Diacetate

Abstract

The reactions of volatile tin organometallic compounds with oxygen have been investigated as a method for preparing transparent, electrically conducting layers of tin oxide. Several organometallic tin compounds were examined before the process was systematically optimized using dibutyl tin diacetate with excess and as reactants and as carrier gas at a substrate temperature of 420°C in 10–20 min of deposition. The presence of water vapor during oxidation is beneficial.