Recombination in ionization chambers irradiated with pulsed electron beams. I. Plane parallel plate chamber

Abstract

The effects of recombination in a plane parallel plate ionization chamber, when irradiated with pulsed electron beams from about 1 to 50 esu cm-3 per pulse, have been studied. The plate separation was 1 mm and polarizing voltages from 12v to 1200v were applied, and the results compared with the theory of J.W. Boag. Large deviations from this theory were found at the higher electron fluence rates, which were explained assuming that charge conduction was due to both ions and to free electrons. Agreement with Boag was obtained for all polarizing voltages when the initial charge density rates were less than 5 esu cm-3 per pulse.