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A three-dimensional TLM simulation method for thermal effect in high power insulated gate bipolar transistors

Device ModelingElectrical EngineeringEngineeringBias Temperature InstabilityHigh PowerPower Semiconductor DeviceThermal EffectGate Bipolar TransistorsThermal ModelingThermodynamicsHeat TransferPower ElectronicsMicroelectronicsThermal EngineeringCircuit Simulation