Two-Photon Absorption in Zinc-Blende Semiconductors

Abstract

It is shown that a three-band, nonparabolic, model for zinc-blende semiconductors provides a universal curve for the frequency dependence of the two-photon coefficient, whose magnitude differs between semiconductors by the factor ${({E}_{g}{^{3}n_{p}}^{2})}^{\ensuremath{-}1}$. Good agreement is obtained with reported coefficients at 300\ifmmode^\circ\else\textdegree\fi{}K for InSb, ${\mathrm{Hg}}_{1\ensuremath{-}x}{\mathrm{Cd}}_{x}\mathrm{Te}$, GaAs, and CdTe.