Magnetic properties of radio frequency sputtered thin films of La–Pb–Mn oxides

Abstract

We report the synthesis by radio frequency sputtering and characterization of thin films of La0.74Pb0.26MnOz on Si, the substrate of choice for device integration. Textured films with (110) orientation were grown on (100) Si and the films are ferromagnetic below 325 K. Resistivity ρ data show a metal-to-semiconductor transition at Tms=250 K. The ferromagnetic resonance linewidth shows a discontinuity at Tms. Data on magnetoresistance MR=[ρ(0)−ρ(H)]/ρ(0) versus temperature indicate a maximum value of 22% at Tms for a static magnetic field of 2 T and MR values of 15%–22% are observed over the entire temperature range 5–300 K.