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THM, a breakthrough in Hg1−<i>x</i>Cd<i>x</i>Te bulk metallurgy
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1985
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EngineeringCrystal Growth TechnologySolid-state ChemistryPhoto-electrochemical CellChemistryPhotovoltaicsSemiconductorsIi-vi SemiconductorSteady StateMaterials ScienceMaterials EngineeringHeater MethodCrystalline DefectsSolar PowerPhotoelectric MeasurementCrystallographyMicrostructureApplied PhysicsCharge PurificationMetallurgical SystemSolar Cell Materials
After a short review of the different methods of Hg1−xCdxTe bulk crystal growth, the travelling heater method (THM) is presented as a method which allows reaching a steady state, charge purification, and growing oriented crystals. Ingots of 30 mm diam and 80 mm in length are currently produced with a longitudinal homogeneity better than ±0.02 mol and a radial homogeneity better than ±0.002 mol for different x. Electron concentrations of 2×1014 cm−3 with mobilities of 160 000 cm2/Vs at 77 K, for crystals with x=0.21, among other typical characteristics, as well as significant characteristics of photoconductor and photovoltaic detectors, such as R0A products of 16 Ω×cm2 at 77 K for λ=10.5 μm, and 105 Ω×cm2 at 300 K for λ=1.4 μm, attest to the high quality of the grown crystals.