Publication | Closed Access
Enhanced surface mobility and quantum oscillations in topological insulator Bi1.5Sb0.5Te1.7Se1.3 nanoflakes
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Citations
18
References
2013
Year
EngineeringTopological MaterialsMetallic Surface StatesTopological Quantum StateSemiconductorsQuantum OscillationsNanoelectronicsQuantum MaterialsMaterials ScienceEnhanced Surface MobilityPhysicsNanotechnologyTopological MaterialSemiconductor MaterialSurface-dominated TransportSurface ChannelElectronic MaterialsTopological InsulatorApplied PhysicsCondensed Matter PhysicsTopological Heterostructures
In this study, a series of Bi1.5Sb0.5Te1.7Se1.3 (BSTS) flakes 80-nm to 140-μm in thickness was fabricated to investigate their metallic surface states. We report the observation of surface-dominated transport in these topological insulator BSTS nanoflakes. The achievement of surface-dominated transport can be attributed to high surface mobility (∼3000 cm2/V s) and low bulk mobility (12 cm2/V s). Up to 90% of the total conductance, the surface channel was estimated based on the thickness dependence of electrical conductance and the result of the Shubnikov-de Hass oscillations in a 200-nm BSTS. The nature of nontrivial Dirac surface states was also confirmed by the weak anti-localization effect.
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