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In Situ Assembly of Cu<sub><i>x</i></sub>S Quantum-Dots into Thin Film: A Highly Conductive P-Type Transparent Film
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Citations
22
References
2008
Year
EngineeringMetallic NanomaterialsChemistryChemical DepositionThin Film Process TechnologySemiconductor NanostructuresSemiconductorsLarge ConductivityNanoengineeringQuantum DotsNanostructure SynthesisThin Film ProcessingMaterials ScienceCopper SulfideNanotechnologyCuxs FilmSemiconductor MaterialNanocrystalline MaterialElectronic MaterialsNanomaterialsSurface ScienceApplied PhysicsSitu AssemblyThin FilmsSolar Cell Materials
Copper sulfide (CuxS) nanocrystals ranging from ∼2 to 4 nm in diameter were in situ assembled on surface-functionalized substrates at room-temperature to realize novel transparent p-type conducting film that combines good optical transparency and high electrical conductivity. The CuxS film exhibited superior homogeneity, highly compact microstructure and good adhesion to quartz-glass and polyethylene substrates. Results of X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and electron diffraction revealed that the film consisted of uniform fine Cu7S4 nanocrystals with copper vacancies. Good optical transparency and large bandgap blue-shift were observed in the CuxS film attributed to the dominant quantum effect. The CuxS QD film turned out to be a p-type semiconducting film with a large conductivity up to 105 S·m−1 at room temperature, which originated from the numerous defects stabilized by grain boundaries. A mechanism of the CuxS QD film formation has been proposed based on the surface-induced nucleation and the in situ assembly of the CuxS QDs.
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