Intraband absorption of infrared radiation in a semiconductor quantum dot

Abstract

The energy spectrum and bound-bound intraband transitions in semiconductor quantum dots are analyzed. Numerical results for the GaAs-${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As system indicate that a considerable absorption at a number of distinct wavelengths in the infrared range (\ensuremath{\sim}7--25 \ensuremath{\mu}m) may be obtained, which greatly exceeds free-carrier absorption.