Fabrication of <i>L</i>1-MnAl perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions

Abstract

Structural and magnetic properties of MnAl thin films with different composition, growth temperature, and post-annealing temperature were investigated. The optimum condition for fabrication of L10-MnAl perpendicularly magnetized thin film deposited on Cr-buffered MgO single crystal substrate was revealed. The results of x ray diffraction indicated that the MnAl films annealed at proper temperature had a (001)-orientation and L10-ordered structure. The L10-ordered films were perpendicularly magnetized and had a large perpendicular anisotropy. In addition, low surface roughness was achieved. For the optimized fabrication condition, the saturation magnetization Ms of 600 emu/cm3 and perpendicular magnetic anisotropy Ku of 1.0 × 107 erg/cm3 was obtained using the Mn48Al52 target at deposition temperature of 200 °C and post-annealing temperature of 450 °C.