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High-order submillimeter mixing in point-contact and Schottky diodes
15
Citations
4
References
1976
Year
EngineeringLaser ScienceLaser ApplicationsLaser MaterialHigh-power LasersSemiconductor DeviceRf SemiconductorRadiation GenerationSemiconductor LasersElectronic EngineeringHarmonic MixerPhotonicsElectrical EngineeringHcn LaserPhysicsMicroelectronicsHigh-order SubmillimeterApplied PhysicsBeat NotesOptoelectronics
The 337-μm radiation of an HCN laser has been mixed with the radiation of a 3-mm kylstron in a harmonic mixer employing various types of diodes. Beat notes resulting from different orders of mixing, occurring at frequencies as high as 4.5 THz, could be directly observed on the scope. Gallium arsenide appeared to be the most favorable diode material, whereas the Schottky barrier type produce slightly better results than the conventional GaAs point-contact diodes. The performance of the heterodyne system at 891 GHz is given in terms of sensitivity (NEP) and conversion loss (Lc).
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