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Study of schottky barrier heights of indium-tin-oxide on p-GaN using x-ray photoelectron spectroscopy and current-voltage measurements

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsX-ray Photoelectron SpectroscopyAluminum Gallium NitrideGan Power DeviceCurrent-voltage MeasurementsSchottky Barrier Heights