Electrical resistivity, TCR and thermoelectric power of annealed thin copper films

Abstract

The electrical resistivity, temperature coefficient of resistance (TCR) and thermoelectric power are measured on systematically annealed copper films formed by the vacuum evaporation method. From the measured quantities the scattering coefficient and the bulk mean free path of the conduction electrons are calculated. The electron mean free path is found to be 410+or-100 AA. The energy dependence of mean free path U and the energy dependence of Fermi surface area V are calculated from the thermoelectric power measurements as a function of thickness. Both U and V are found to be negative and thickness-dependent.