Publication | Closed Access
Studies on Si(111) 7/8 × 7/8 -Bi and -Ag surfaces by x-ray diffraction under nearly normal incidence
15
Citations
27
References
1989
Year
Materials ScienceBulk CrystalSurface CharacterizationX-ray SpectroscopyEngineeringPhysicsCrystalline DefectsSurface AnalysisSurface ScienceApplied PhysicsNormal IncidenceX-ray DiffractionRod ProfilesInterference EffectSilicon On InsulatorCrystallography-Ag Surfaces
X-ray intensity versus energy (I-E) curves were measured in order to obtain the rod profiles. The three-dimensional surface structures of Si(111) 7/8 × 7/8 -Bi and -Ag were analyzed. The adsorption sites with respect to the crystal were derived from the intensity changes along the integral-order rods especially near the Bragg points by utilizing the interference effect between the x rays diffracted from the adsorbed layer and the bulk crystal. The positions of the surface Si atoms were studied by using the interference effect between the x rays diffracted from the adsorbed layer and the surface Si layer.
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