Direction‐Selective and Length‐Tunable In‐Plane Growth of Carbon Nanotubes

Abstract

Chemical vapor deposition on selectively masked SiO 2 patterns has been used to obtain controlled placement and exclusive in‐plane growth of length‐ and direction‐tunable carbon nanotubes (see Figure and inside cover). Nanotube bridges interconnecting SiO 2 patterns are fabricated, and their electrical characteristics are demonstrated. This approach holds promise for manufacturing large‐scale microelectronic systems integrated with nanotube–electrode units.