Photovoltaic Effect Observed on the Construction of Metal-Amorphous In_<i>x</i>Se_1-<i>x</i>Thin Film–SnO₂System

Abstract

Photovoltages as a function of light intensity and wavelength have been studied on the system of metal-amorphous InxSe1-x thin film-SnO2, where the metal electrodes of Au, Sb, Al, Ag, In, and Cu were used. For all except the Sb electrode, the system had a positive photovoltage at short wavelength and a negative one at longer wavelength. Among these electrodes, the construction having the top electrode of Sb exhibited the best photovoltaic characteristic; next was the system with the Au electrode. The photovoltage increased first linearly and then logarithmically with the photon flux. A considerable photovoltage was obtained for a contact with x=0.2. A tentative band model for a consistent explanation of the experimental data is postulated.