The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties

Abstract

The electrostatic discharge (ESD) properties of the InGaN-light emitting diode (LED) were investigated in terms of the internal capacitance of the InGaN-LED. The LEDs with higher internal capacitance were found to be more resistant to external ESD impulses. The internal capacitance of the InGaN-LED was controlled by the silicon doping level of the n-GaN layer bordering the active layer. The human body model ESD yield at −500 V was increased from 27% to 94% by increasing the internal capacitance. Moreover, the high ESD pass yield was maintained up to −7000 V.