Optical excitation and recombination mechanisms of Tb3+-doped zinc sulphide thin films

Abstract

Time-resolved spectroscopy measurements show that the excitation of terbium photoluminescence in thin film ZnS:Tb electroluminescent devices, due to energy transfer from donor-acceptor pairs, is independent of temperature. The differences in the decay kinetics of terbium ions excited in various ways demonstrate that terbium ions in different crystal sites have different excitation mechanisms.