Low‐temperature Region of the In–Se System

Abstract

Abstract A study of the low‐temperature region of the In–Se system has been performed by means of isothermal annealing of diffusion couples as well as by X‐ray, microscopic and microprobe analyses. Four binary compounds have been observed – In 4 Se 3 , InSe, In 6 Se 7 and In 2 Se 3 . Original experimental results about the crystal structure and electrical conductivities of the binary compounds have been compared with available literature data or calculated values. A DSC study of the compound InSe has revealed that it melts peritecticly at about 618 °C. The diffusion controlled transition from one In‐Se compound to another can be achieved without kinetic difficulties, following the phase arrangement from the equilibrium phase diagram. There are indications that small deviations from the exact stoichiometric ratios are possible.