Applied Physics Letters · 1991 · 29 citations · 6 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistryThin FilmsPhotovoltaic MaterialsSemiconductor Thin FilmsSolar Cell MaterialsSolar CellsThin Film AnnealingThin-film MaterialsAbsorption CoefficientsBand GapDevice FabricationOptical AbsorptionOptical Band GapOptical ReflectionPolycrystalline Thin FilmsX-ray Diffraction Analysis
Polycrystalline thin-film CuInSe2 has been formed by rapid thermal processing of vacuum codeposited Cu, In, and Se. Films were fabricated and characterized in three composition regions: Cu-poor (∼20 at. % Cu), stoichiometric (25 at. %), and Cu-rich (∼28 at. %). Characterization results are presented including x-ray diffraction analysis, electron probe for microanalysis, scanning electron microscopy, and optical reflection and transmission measurements. Results show that nearly single-phase material has been formed from codeposited precursors with a post-deposition annealing time of less than 2 min. The films have optical absorption coefficients in the high 104 cm−1 range with minimum subgap absorption, and an optical band gap of 1.0 eV with smooth morphologies amenable to photovoltaic device fabrication.
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Growth of CuInSe2 by molecular beam epitaxy
Steven P. Grindle, A. H. Clark, Shokrollah Rezaie-Serej et al. · Journal of Applied Physics · 1980 · 99 citations · Full text