Oxidation of Cu and Cu3Ge thin films

Abstract

We have studied the oxidation kinetics of Cu and Cu3Ge thin films in air using in situ resistivity measurement and x-ray photoelectron spectroscopy. Thin films of Cu oxidize in air around 250 °C to form CuO with an activation energy of 0.74 eV. In contrast to Cu, thin films of Cu3Ge oxidize only above 450 °C. The excellent oxidation resistance of Cu3Ge is due to the thin GeO2 layer which protects Cu3Ge from oxidation below 450 °C. Above 510 °C, GeO2 evaporates and the oxidation protection is lost. Besides the excellent oxidation resistance and low resistivity, we also found Cu3Ge to have a better adhesion to SiO2 than Cu. It has the potential to be used as an adhesion layer and passivation layer in Cu metallization.