Depth profiles of implanted 18F, 79Br, and 132Xe in silicon in the energy range 85–600 keV - Concepedia

Concepedia

Publication | Closed Access

Depth profiles of implanted 18F, 79Br, and 132Xe in silicon in the energy range 85–600 keV

10

Citations

14

References

1989

Year

Chunyu Tan, Yueyuan Xia, Hong Yang, Xiufang Sun, Jiarui Liu, Zheng Zongshuang, Zhu Peiran

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Implanted 18FElectrical EngineeringSemiconductor DeviceEngineeringApplied PhysicsDepth ProfilesSemiconductor Device FabricationSilicon On InsulatorMicroelectronicsEnergy Range 85–600

References

	Year	Citations

Page 1