Avalanche-Induced Current Enhancement in Semiconducting Carbon Nanotubes

Abstract

Semiconducting single-wall carbon nanotubes under high electric field stress ( approximately 10 V/mum) display a remarkable current increase due to avalanche generation of free electrons and holes. Unlike other materials, the avalanche process in such 1D quantum wires involves access to the third subband and is insensitive to temperature but strongly dependent on diameter approximately exp(-1/d;{2}). Comparison with a theoretical model yields a novel approach to obtain the inelastic optical phonon emission length lambda{OP,ems} approximately 15d nm. The new results underscore the importance of multiband transport in 1D molecular wires.