Electrical and optical properties of Mg-, Ca-, and Zn-doped InP crystals grown by the synthesis, solute diffusion technique

Abstract

p-type InP crystals doped with Mg, Ca, and Zn have been grown by the synthesis, solute diffusion (SSD) technique. Distribution coefficients for the Mg and Ca in the SSD-grown InP were determined to be 0.20 and 0.025, respectively. 4.2 K photoluminescence emission peaks have also been investigated for Mg-, Ca-, and Zn-doped samples. The binding energy is determined to be EA (Mg)=40 meV, EA (Ca)=43 meV, and EA (Zn)=47 meV. Comparison of the emission peak energies between impurity-doped and nominally-undoped InP shows that Mg and Ca as well as Zn are incorporated as residual shallow acceptors in the high-purity SSD-grown InP (ND−NA ≤1015 cm−3 at 300 K).