Room temperature InAsSb photovoltaic midinfrared detector

Abstract

An InAs0.91Sb0.09 p-i-n photovoltaic midinfrared detector grown by molecular beam epitaxy and operating at room temperature is presented. An R0A of 1.05 Ω cm2 at 250 K and 0.12 Ω cm2 at 295 K has been achieved, resulting in a detectivity of 4.5×109 cmHz/W at 3.39 μm and 250 K. The quality of the active region material ensures a sufficiently low generation-recombination current. Room temperature performances are limited by the diffusion of holes from the active region through the confining barriers.