ZnSe Nanowire Photodetector Prepared on Oxidized Silicon Substrate by Molecular-Beam Epitaxy

Abstract

We reported the growth of ZnSe nanowires on oxidized Si substrate by molecular-beam epitaxy. It was found that average length, average diameter, and density of the ZnSe nanowires were , , and , respectively. It was also found that the ZnSe nanowires were structurally uniform and defect-free with a pure zinc blend structure. UV photodetectors were then fabricated by sputtering a thick Au film through an interdigitated shadow mask onto the ZnSe nanowires. It was found that photocurrent to dark current contrast ratio of our ZnSe nanowire photodetector was with applied bias.