Scattering Mechanism and Low Temperature Mobility of MOS Inversion Layers

Abstract

For the interpretation of observed low temperature mobility in n-channel inversion layers of Si MOS, two scattering mechanisms are discussed theoretically. The one is the scattering due to interface roughness and a simplified model is investigated. The other is the scattering by the charged centers. The former can explain the carrier concentration dependence of the mobility in high carrier concentration region. The latter is introduced for the interpretation of the mobility at low carrier concentration with some considerations of the charge distribution.