Kinetics of hydrogen interaction with SiO2-Si interface trap centers

Abstract

The effects of low temperature (≤700 °C ) annealing on the thermal dissociation of hydrogen-passivated interface trap centers of a SiO2-Si(100) system is studied using positron annihilation spectroscopy. The Si—H bonds dissociate with an activation energy of 2.60±0.06 eV. Assuming that the anneal generates trap centers with a single charge, positron measurements indicate that ∼4.5×108 trap centers/cm2 are created by a 600 °C anneal.