The effect of isolation regions on the current gain of inverse NPN-transistors used in Integrated Injection Logic (I<sup>2</sup>L)

Abstract

In Integrated Injection Logic it is desirable to separate the base regions of the common emitter inverse npn transistors from each other. An n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -diffusion isolation or oxide isolation minimizes the loss in gain due to hole currents from the base to the emitter. We analyzed the case of n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> isolation with different unicollector structures of different geometries. Experimental results are presented based on the following comparison; A: no n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> isolation; B: shallow n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> isolation and C: deep n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> isolation.