The effect of high magnetic fields on the ground state of hydrogen‐like impurities in semiconductors

Abstract

Abstract A variational calculation has been made of the ground state energy of a semiconductor impurity in the effective mass approximation (EMA), in the presence of high magnetic fields. The field dependence of the computed binding energy and the wave function parameters are presented. The calculation was made for isotropic effective mass as well as for a mass anisotropy corresponding to electrons in germanium. The effect of the many‐valley structure of the conduction band in germanium, and the deviations from the EMA, are discussed.