Valence- and conduction-band densities of states for tetrahedral semiconductors: Theory and experiment

Abstract

The theoretical and experimental electronic densities of states for both the valence and conduction bands are presented for the tetrahedral semiconductors Si, Ge, GaAs, and ZnSe. The theoretical densities of states were calculated with the empirical pseudopotential method and extend earlier pseudopotential work to 20 eV above the valence-band maximum. X-ray photoemission and inverse-photoemission results make it possible to compare critical-point features in the band structure with experimental structures.